Room-temperature magnetoresistance in CoFeB/STO/CoFeB magnetic tunnel junctions

@inproceedings{Oguz2009RoomtemperatureMI,
  title={Room-temperature magnetoresistance in CoFeB/STO/CoFeB magnetic tunnel junctions},
  author={Kagan Oguz and John Michael David Coey},
  year={2009}
}
Abstract A series of Co 40 Fe 40 B 20 /SrTiO 3 /Co 40 Fe 40 B 20 magnetic tunnel junctions with a bottom-pinned synthetic antiferromagnet have been prepared by sputtering. Devices optimally annealed at 325 °C exhibit an exchange bias of about 65 mT, and a tunnel magnetoresistance of 2%. The smaller than predicted effect is attributed to the lack of epitaxy between the crystallized CoFeB electrodes and the SrTiO 3 (STO) barrier, due to poor crystal quality of the barrier layer. Unlike MgO, well… CONTINUE READING