Room-temperature ferromagnetism in Mn-doped semiconducting CdGeP2.

@article{Mahadevan2001RoomtemperatureFI,
  title={Room-temperature ferromagnetism in Mn-doped semiconducting CdGeP2.},
  author={Priya Mahadevan and Alex Zunger},
  journal={Physical review letters},
  year={2001},
  volume={88 4},
  pages={
          047205
        }
}
The chalcopyrite CdGeP2 doped with Mn have been recently found to exhibit room-temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d5) case. However, chalcopyrite semiconductors exhibit low-energy intrinsic defects. We show theoretically how ferromagnetism results from the interaction of Mn with hole-producing intrinsic defects. 
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FIG. 1. The range of Cd and Ge chemical potentials where CdGeP2, GeP and Cd3P2 are stable

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