Room-temperature demonstration of integrated silicon single-electron transistor circuits for current switching and analog pattern matching

@article{Saitoh2004RoomtemperatureDO,
  title={Room-temperature demonstration of integrated silicon single-electron transistor circuits for current switching and analog pattern matching},
  author={Masumi Saitoh and H. Harata and Toshiro Hiramoto},
  journal={IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.},
  year={2004},
  pages={187-190}
}
This paper reports the first room-temperature (RT) operation of integrated single-electron transistor (SET) circuits. We fabricate silicon single-hole transistors (SHTs) with high controllability and obtain large Coulomb blockade (CB) oscillation with the peak-to-valley current ratio (PVCR) of over 10/sup 3/ at RT. A current switch using two SHTs integrated under a single gate is demonstrated at RT. We propose a novel application of SHTs, an ultra-compact analog pattern matching circuit. Its… CONTINUE READING
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