Room temperature current modulation in large area electronic junctions of spin crossover thin films

@article{Shalabaeva2018RoomTC,
  title={Room temperature current modulation in large area electronic junctions of spin crossover thin films},
  author={V. Shalabaeva and K. Ridier and S. Rat and Mar{\'i}a D. Manrique-Ju{\'a}rez and L. Salmon and I. S{\'e}guy and A. Rotaru and G. Moln{\'a}r and A. Bousseksou},
  journal={Applied Physics Letters},
  year={2018},
  volume={112},
  pages={013301}
}
We report large-area (∼3 mm2), pinhole free crossbar junctions of thin films of the molecular complex [Fe(HB(tz)3)2] displaying spin transition around 336 K. The charge transport in the thinner junctions (10 and 30 nm) occurs by a tunneling mechanism, which is not affected substantially by the spin transition. The thicker junctions (100 and 200 nm) exhibit rectifying behavior and a reproducible drop of their electrical resistance by ca. 65–80% when switching the molecules from the high-spin to… Expand
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