Room temperature coherent control of spin defects in hexagonal boron nitride

@article{Gottscholl2020RoomTC,
  title={Room temperature coherent control of spin defects in hexagonal boron nitride},
  author={Andreas Gottscholl and Matthias Diez and Victor A Soltamov and Christian Kasper and Andreas Sperlich and Mehran Kianinia and Carlo Bradac and Igor Aharonovich and Vladimir Dyakonov},
  journal={Science Advances},
  year={2020},
  volume={7}
}
Atomic defects in 2D materials show excellent spin coherence time and become promising contenders for quantum applications. Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance… 

Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride

Optically active spin defects in wide-bandgap materials have gained wide-spread attention as photonic systems for potential applications in quantum information and quantum sensing. Spin defects in

Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride

1 Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany 2 Ioffe Institute, St. Petersburg 194021, Russia 3

Implementation of Quantum Machine Learning for Electronic Structure Calculations of Periodic Systems on Quantum Computing Devices

The benchmark test of the hybrid quantum machine learning on the IBM-Q quantum computer is implemented to calculate the electronic structure of typical two-dimensional crystal structures: hexagonal-boron nitride and graphene, implying that the hybrid machine learning method, empowered by quantum computers, could provide a new way of calculating the electronic structures of quantum many-body systems.

Rabi oscillation of V$_\text{B}^-$ spin in hexagonal boron nitride.

VdW materials are a family of materials ranging from semimetal, semiconductor to insulator, and their common characteristic is the layered structure. These features make them widely applied in the

Coherence protection of spin qubits in hexagonal boron nitride

Spin defects in foils of hexagonal boron nitride are an attractive platform for magnetic field imaging, since the probe can be placed in close proximity to the target. However, as a III-V material

An Effective Electrochemical Platform for Chloramphenicol Detection Based on Carbon-Doped Boron Nitride Nanosheets

Currently, accurate quantification of antibiotics is a prerequisite for health care and environmental governance. The present work demonstrated a novel and effective electrochemical strategy for

Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Spin defects in hexagonal Boron Nitride (hBN) attract increasing inter-est for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular,

Spin-phonon decoherence in solid-state paramagnetic defects from first principles

Paramagnetic defects in diamond and hexagonal boron nitride possess a unique com-bination of spin and optical properties that make them prototypical solid-state qubits. Despite the coherence of these
...

References

SHOWING 1-10 OF 51 REFERENCES

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

An ensemble of spins associated with an intrinsic defect of two-dimensional hexagonal boron nitride is shown to be optically addressable, allowing spin polarization of its triplet ground state and providing evidence of spin coherence.

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long

Room temperature coherent control of defect spin qubits in silicon carbide

It is demonstrated that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin.

Excitation and coherent control of spin qudit modes in silicon carbide at room temperature

The authors present the selective excitation and control of spin qudits modes based on an ensemble of silicon vacancy defects in silicon carbide at room temperature and develop a theory of multipole spin dynamics and demonstrate selective quantum control of homogeneous spin packets with sub-MHz spectral resolution.

Observation of an environmentally insensitive solid-state spin defect in diamond

A color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise is reported: the neutral charge state of silicon vacancy (SiV0), a promising defect for quantum network applications.

Optical initialization of a single spin-valley in charged WSe2 quantum dots

This work provides unambiguous evidence for localized holes with a net spin in optically active WSe2 quantum dots and initialize their spin-valley state with the helicity of the excitation laser under small magnetic fields, estimating a lower bound of the valley lifetime of a single charge in a quantum dot from the recombination time to be of the order of nanoseconds.

Locking of electron spin coherence above 20 ms in natural silicon carbide

One of the challenges in quantum information science is to achieve ultralong spin coherence in naturally grown solid-state systems. So far, isotope engineering is generally needed to suppress the

Electron spin decoherence in silicon carbide nuclear spin bath

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$

Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride

Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles methods which are

Longitudinal spin relaxation in nitrogen-vacancy ensembles in diamond

An experimental study of the longitudinal electron-spin relaxation time (T1) of negatively charged nitrogen-vacancy ensembles in diamond as a function of temperature and magnetic field reveals three processes responsible for T1 relaxation.
...