Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

@article{Wang2008RoomtemperatureAS,
  title={Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.},
  author={Xinran Wang and Yijian Ouyang and Xiaolin Li and Hailiang Wang and Jing Guo and H. Dai},
  journal={Physical review letters},
  year={2008},
  volume={100 20},
  pages={
          206803
        }
}
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10(6) and on-state current density as high as approximately 2000 microA/microm. We estimated carrier mobility approximately 200 cm2/V s and scattering mean free path approximately 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are… 
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