Room-Temperature Ultraviolet Nanowire Nanolasers

  title={Room-Temperature Ultraviolet Nanowire Nanolasers},
  author={Michael H. Huang and Samuel Mao and Henning Feick and Haoquan Yan and Yiying Wu and Hannes Kind and Eicke R. Weber and Richard E. Russo and Peidong Yang},
  pages={1897 - 1899}
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with… 

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The absence of band-gap renormalization in the laser emission indicates a marked increase in the stability of the exciton in one dimension.

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High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects

Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

nanoparticles in dimethylsulfoxide onto the PLL film for about 20 min, after which it was rinsed in dimethylsulfoxide and then dichloromethane. From the molecular weight, the average length of the