Room-Temperature Ultraviolet Nanowire Nanolasers

@article{Huang2001RoomTemperatureUN,
  title={Room-Temperature Ultraviolet Nanowire Nanolasers},
  author={Michael H. Huang and Samuel Mao and Henning Feick and Haoquan Yan and Yiying Wu and Hannes Kind and Eicke R. Weber and Richard E. Russo and Peidong Yang},
  journal={Science},
  year={2001},
  volume={292},
  pages={1897 - 1899}
}
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with… 

GaN nanowire lasers with low lasing thresholds

We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar

Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si.

The electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si is reported, which proceeds due to optical gain achieved by the stimulated emission and multiple scattering.

Ultraviolet stimulated emission from high-temperature-annealed MgO microcrystals at room temperature

Research on semiconductor nanowires underlies the development of the miniaturization of laser devices with low cost and low energy consumption. In general, nanowire lasers are made of direct band gap

Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities

Ordered ZnO nanowire arrays have been fabricated in N2 background gas by catalyst-free nanoparticle-assisted pulsed-laser deposition. A single ZnO nanowire was collected in an electrode gap by

Low-threshold nanowire laser based on composition-symmetric semiconductor nanowires.

The controllable growth of composition-symmetric CdS(x)Se(1-x) nanowires is reported by using a multistep thermal evaporation route with moving sources to have potential applications as low-threshold nanoscale lasers in integrated nanophotonics.

Hydrothermal fabrication of well-ordered ZnO nanowire arrays on Zn foil: room temperature ultraviolet nanolasers

Well-ordered nanowires of the hexagonal wurtzite ZnO having an average diameter of 80 nm, a typical length of 12 μm, and a mean packing density of 7.5 nanowires μm−2 have been directly grown on Zn

Room-temperature dual-wavelength lasing from single-nanoribbon lateral heterostructures.

The growth of nanoribbon lateral heterostructures made of a CdS(x)Se(1-x) central region with epitaxial C dS lateral sides using a multistep thermal evaporation route with a moving source is reported.

Electrically pumped waveguide lasing from ZnO nanowires.

Electrically pumped Fabry-Perot type waveguide lasing from laser diodes that consist of Sb-doped p-type ZnO nanowires and n-typeZnO thin films are demonstrated, which exhibit highly stable lasing at room temperature, and can be modelled with finite-difference time-domain methods.

Microstadium single-nanowire laser

We report room-temperature lasing in an optically pumped single-nanowire stadium microresonator. The photoluminescence from a chemically synthesized GaN nanowire is coupled and confined in a
...

References

SHOWING 1-10 OF 27 REFERENCES

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a

Optically pumped lasing of ZnO at room temperature

We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities

Optical gain and stimulated emission in nanocrystal quantum dots.

This work examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.

GaAs p‐n junction formed in quantum wire crystals

A p‐n junction is formed for the first time in a cross‐sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is

Optical gain in silicon nanocrystals

It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.

Lasing from excitons in quantum wires.

The absence of band-gap renormalization in the laser emission indicates a marked increase in the stability of the exciton in one dimension.

True Blue Inorganic Optoelectronic Devices

The realization of blue light-emitting optoelectronic deviceshas attracted much attenion. Here the leading candidates (ZnSe, GaN, SiC, organic polymers) are examined and research towards the

Uniaxial locked epitaxy of ZnO on the a face of sapphire

High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects

Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

nanoparticles in dimethylsulfoxide onto the PLL film for about 20 min, after which it was rinsed in dimethylsulfoxide and then dichloromethane. From the molecular weight, the average length of the