Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

@article{Sun2011RoomTemperatureOO,
  title={Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography},
  author={Yongshun Sun and Rusli and Navab Singh},
  journal={IEEE Transactions on Nanotechnology},
  year={2011},
  volume={10},
  pages={96-98}
}
We report on room-temperature operation of Si nanowires (SiNWs) based single-electron transistors (SETs) fabricated based on the top-down approach using conventional optical lithography. The SETs exhibit strong Coulomb oscillation at room temperature due to extreme small size of SiNW, which has a diameter of 4 nm. The optical lithography approach is attractive compared to the commonly used electron beam lithography for the fabrication of SETs because it offers the possibility of integrating Si… CONTINUE READING

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