Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region

@article{Ho2018RoomTemperatureLA,
  title={Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 $\mu$m Region},
  author={Vinh X. Ho and Talal Mohammed Al Tahtamouni and Hongxing Jiang and J. Y. Lin and John M. Zavada and Nguyen Quang Vinh},
  journal={ACS Photonics},
  year={2018}
}
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 μm wavelength range from Er… 

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