Roles of sidewall oxidation in the devices with shallow trench isolation

Abstract

The effects of sidewall sacrificial and sidewall oxidations on the characteristics of devices with shallow trench isolation (STI) have been investigated. We found that sidewall sacrificial and sidewall oxidations significantly affected junction leakage and gate oxide integrity (GOI). The sidewall sacrificial oxidation was shown to reduce oxidation-induced… (More)

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5 Figures and Tables