Role of volume versus defects in the electrical resistivity of lattice-distorted V ( 001 ) ultrathin films

@inproceedings{Huttel2007RoleOV,
  title={Role of volume versus defects in the electrical resistivity of lattice-distorted V ( 001 ) ultrathin films},
  author={Yves Huttel and Jorge I. Cerd{\'a} and Jos{\'e} Luis Alejos Mart{\'i}nez and Alfonso Cebollada},
  year={2007}
}
4 nm thick V layers grown by triode sputtering on MgO 001 single crystals and capped with MgO exhibit a perfect epitaxy accompanied by a tetragonal distortion and an unexpected volume compression that increases with the V deposition temperature. The electrical resistivity follows a deposition temperature dependence with these structural modifications, decreasing by an order of magnitude across the temperature range studied. Total energy ab initio calculations rule out electronic structure… CONTINUE READING