Role of single defects in electronic transport through carbon nanotube field-effect transistors.

@article{Freitag2002RoleOS,
  title={Role of single defects in electronic transport through carbon nanotube field-effect transistors.},
  author={Marcus Freitag and Alan T Charlie Johnson and Sergei V. Kalinin and Dawn A. Bonnell},
  journal={Physical review letters},
  year={2002},
  volume={89 21},
  pages={216801}
}
The influence of defects on electron transport in single-wall carbon nanotube field-effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM images are used to quantify the depletion surface potential, and from this the Fermi level, at individual defects along the CNFET length. SIM is used to measure the voltage distribution along the CNFET. When the CNFET is in the conducting state, SIM reveals a uniform potential drop along… CONTINUE READING
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