Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET

@article{Yang2016RoleOS,
  title={Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET},
  author={Song Yang and Zhikai Tang and Yunyou Lu and Qimeng Jiang and Anping Zhang and Kevin J. Chen},
  journal={2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)},
  year={2016},
  pages={85-88}
}
In this work, we investigated the mechanisms of nitride-based passivation (i.e. SiNx and AlN) and their impact on high-voltage switching of AlGaN/GaN heterojunction power transistors with TCAD simulations. It was found that they play a vital role for nitride-passivated devices to simultaneously achieve low dynamic ON-resistance (Ron) and uncompromised… CONTINUE READING