Role of free electrons in phosphorescence in n-type wide bandgap semiconductors.


Long persistent phosphorescence is generally known as a phenomenon involving carrier traps induced by defects or impurities in crystals. In this paper, phosphorescence sustained for tens of minutes was found in intentionally undoped ZnO and it was proposed to be a universal phenomenon in wide bandgap semiconductors upon satisfying several conditions. A new… (More)
DOI: 10.1039/c7cp05796b


Figures and Tables

Sorry, we couldn't extract any figures or tables for this paper.