Role of free electrons in phosphorescence in n-type wide bandgap semiconductors.

Abstract

Long persistent phosphorescence is generally known as a phenomenon involving carrier traps induced by defects or impurities in crystals. In this paper, phosphorescence sustained for tens of minutes was found in intentionally undoped ZnO and it was proposed to be a universal phenomenon in wide bandgap semiconductors upon satisfying several conditions. A new… (More)
DOI: 10.1039/c7cp05796b

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