Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

@inproceedings{Parthiban2014RoleOD,
  title={Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor},
  author={Shanmugam Parthiban and Jang-Yeon Kwon},
  year={2014}
}
In this review, we discuss the recent developments of high-performance and improved-stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin-film transistors (TFTs) properties. TAOSs are widely explored with the aim of producing high-performance semiconductors suitable for the channel layer of TFTs which enable to survive under light and thermal-bias-induced stress conditions. Numerous TAOSs have been invented with some improved performance characteristics of TFTs… CONTINUE READING

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