Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.

@article{Chen2012RobustnessOT,
  title={Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.},
  author={Chaoyu Chen and Shaolong He and Hongming Weng and Wentao Zhang and Lin Zhao and Haiyun Liu and Xiaowen Jia and Daixiang Mou and Shanyu Liu and Junfeng He and Yingying Peng and Ya Feng and Zhuojin Xie and Guodong Liu and Xiao-li Dong and Jun Zhang and Xiaoyang Wang and Qinjun Peng and Zhimin Wang and Shenjin Zhang and Feng Mei Yang and Chuangtian Chen and ZuYan Xu and Xi Dai and Zhong Fang and Xingjiang Zhou},
  journal={Proceedings of the National Academy of Sciences of the United States of America},
  year={2012},
  volume={109 10},
  pages={3694-8}
}
The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved… CONTINUE READING