Robustness of SiC JFETs and Cascodes

Abstract

Trench JFET Structure Figure 1 shows the structure of the trench JFET. The low on-resistance derives from the vertical channel that repeats with a high cell density, creating a short path between the source and drain contacts via the channel and drift regions. The drift region doping and thickness are set by the desired voltage rating. This device does not… (More)

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Cite this paper

@inproceedings{Carbide2016RobustnessOS, title={Robustness of SiC JFETs and Cascodes}, author={United Silicon Carbide and Anup Bhalla and John Bendel and Xueqing Li}, year={2016} }