Robustness of CNT Via Interconnect Fabricated by Low Temperature Process over a High-Density Current

@article{Kawabata2008RobustnessOC,
  title={Robustness of CNT Via Interconnect Fabricated by Low Temperature Process over a High-Density Current},
  author={Akio Kawabata and Shintaro Sato and Tatsuhiro Nozue and Takashi Hyakushima and Masaaki Norimatsu and Miho Mishima and Tomo Murakami and Daiyu Kondo and Koji Asano and Mari Ohfuti and Hiroshi Kawarada and Tadashi Sakai and Mizuhisa Nihei and Yuji Awano},
  journal={2008 International Interconnect Technology Conference},
  year={2008},
  pages={237-239}
}
We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365 °C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm2 at 105 °C for 100 hours without any… CONTINUE READING
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