Robustness and turn-off losses of high voltage IGBT

Abstract

A simple model for the turn-off of high voltage IGBTs with long carrier lifetime is derived from the device physics. It is used to get a better understanding of the behavior of the device during the turn-off transient and the influence of the gate drive and a capacitive snubber. The peak electric field and the overvoltage are analyzed and special effects of field stop devices are discussed.

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Cite this paper

@article{Eckel2007RobustnessAT, title={Robustness and turn-off losses of high voltage IGBT}, author={H.-G. Eckel and M. M. Bakran}, journal={2007 European Conference on Power Electronics and Applications}, year={2007}, pages={1-10} }