Robustness Evaluation of MOSFETs by Equivalent Cell Behavioral Model of the Gate Parasitic Resistance

@article{Chimento2007RobustnessEO,
  title={Robustness Evaluation of MOSFETs by Equivalent Cell Behavioral Model of the Gate Parasitic Resistance},
  author={Filippo Chimento and Salvatore Musumeci and Angelo Raciti and S. Sannino and Angelo Magri and Maurizio Melito and Florence Zara},
  journal={2007 IEEE Industry Applications Annual Meeting},
  year={2007},
  pages={350-357}
}
The main purpose of this work has been to carry out a complete analysis by simulation of the behavior of low- voltage power MOSFETs accounting for the effect of the gate parasitic-RC distribution. The use of a low-gate mesh resistance has been analyzed as an overall alternative to more traditional materials. Moreover, a design using mixed materials (poly… CONTINUE READING