Robust helical edge transport in gated InAs/GaSb bilayers.

@article{Du2015RobustHE,
  title={Robust helical edge transport in gated InAs/GaSb bilayers.},
  author={Lingjie Du and Ivan Knez and Gerard Sullivan and Rui-Rui Du},
  journal={Physical review letters},
  year={2015},
  volume={114 9},
  pages={096802}
}
We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e^{2}/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to… CONTINUE READING

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