Robust SEU Mitigation of 32 nm Dual Redundant Flip-Flops Through Interleaving and Sensitive Node-Pair Spacing

@article{CabaasHolmen2013RobustSM,
  title={Robust SEU Mitigation of 32 nm Dual Redundant Flip-Flops Through Interleaving and Sensitive Node-Pair Spacing},
  author={M. Caba{\~n}as-Holmen and E. Cannon and Salim A. Rabaa and T. Amort and J. Ballast and Michael Carson and Duncan Lam and R. Brees},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={4374-4380}
}
We introduce the 32 nm SOI Boeing Interleaved Flip-Flop, which is based on the DICE topology with additional RHBD layout enhancements. Sensitive node pairs were separated by interleaving elements of the flip-flop cell, to attain the required SEU performance while minimizing the area, speed and power impact. The Boeing Interleaved Flip-Flop takes advantage of the reduced charge sharing inherent to an SOI technology to maintain a two order of magnitude SEU improvement relative to the unhardened… Expand
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