Rigorous Theory and Simplified Model of the Band-to-band Tunneling in Silicon

@inproceedings{Schenk1993RigorousTA,
  title={Rigorous Theory and Simplified Model of the Band-to-band Tunneling in Silicon},
  author={Andreas Schenk},
  year={1993}
}
-The phonon-assisted band-to-band tunneling rate in crystalline silicon is calculated using the equilibrium Green's function formalism. Electron-phonon collisions, that balance the momentum, are included in the perturbation operator. Houston-type solutions are used for the time dependence of the Bloch states. RPA deeoupling yields a tractable expression for the differential tunneling conductivity. Its evaluation is presented explicitly, taking exactly into account the anisotropy of the six… CONTINUE READING
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References

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Handbook of Mathematical Functions , National Bureau of Standards

M. Abramowitz, I. A. Stegun
Appl . Math . Ser . Nr . • 1969

Proc

R. N. Hall
Int. Conf. Phys. Sem., Prague • 1960

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