Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium

@article{Zhou2008RigorousSS,
  title={Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium},
  author={Xing Zhou and Zhaomin Zhu and S. Rustagi and Guan Huei See and Guojun Zhu and Shihuan Lin and Chengqing Wei and Guan Hui Lim},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={616-623}
}
This paper presents a rigorously-derived analytical solution of the Poisson equation with both electrons and holes in pure silicon, which is applied to the analysis of undoped symmetric double-gate transistors. An implicit surface-potential equation is obtained that can be solved by a second-order Newton-Raphson technique along with an appropriate initial guess. Within the assumption of holes at equilibrium that is being used in the existing literature, the new results, when compared with the… CONTINUE READING
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