Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging

  title={Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging},
  author={Yunfei Deng and Bruno M. La Fontaine and Harry J. Levinson and Andrew R. Neureuther},
  booktitle={SPIE Advanced Lithography},
Rigorous electromagnetic scattering simulation is used to characterize mask diffraction of various EUVL mask structures. Planar multilayer masks with three kinds of absorber stacks and new subtractive (binary, att-PSM, alt-PSM) etched multilayer masks are studied for lithography performance for line and space features in the 45 nm node. The simulation results for process window show that the combined depth of focus of the Cr/SiO2 absorber stack masks is about 320 nm maximum with sigma of 0.8… 
Simulation of fine structures and defects in EUV etched multilayer masks
Rigorous electromagnetic scattering simulation is used to characterize mask diffraction for fine structures of various types of EUVL masks. The Cr/SiO2 absorber mask, the etched multilayer mask and
The impact of mask design on EUV imaging
EUV exposure tools are the leading contenders for patterning critical layers at the 22nm technology node. Operating at the wavelength of 13.5nm, with modest projection optics numerical aperture (NA),
Application of rigorous electromagnetic simulation to SLM-based maskless lithography for 65-nm node
Maskless lithography imaging based on SLM tilt mirror architecture requires illumination of light on a non-planar reflective topography. While the actual mirror dimensions can be much larger than the
Impact of mask absorber on EUV imaging performance
EUVL requires the use of reflective optics including a reflective mask. The reticle blank contains a reflecting multilayer, tuned for 13.5nm actinic light, and an absorber which defines the dark
EUV mask making: an approach based on the direct patterning of the EUV reflector
Extreme Ultraviolet Lithography (EUVL) is the leading candidate for manufacturing integrated circuits beyond the 45-nm technology node. The masks for EUVL are reflective and significantly different
Combined absorber stack for optimization of the EUVL mask
Integration and optimization of the absorber stack has become a critical issue with the progress of the extreme ultraviolet lithography development because it influences many issues such as
Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography
Abstract. The absorber stack on the conventional mask in extreme ultraviolet (EUV) lithography technology leads to mask three-dimensional (3-D) effects including horizontal–vertical (H–V) bias and
Experimental validation of novel EUV mask technology to reduce mask 3D effects
Traditional EUV masks, with absorber on top of the multi-layer (ML) mirror, generally suffer from mask 3D effects: H/V shadowing, best focus shifts through pitch and pattern shifts through focus.
Shadowing effect minimization in EUV mask by modeling
In Extreme Ultraviolet Lithography, the electromagnetic modeling of the mask allows to determine the influence of the mask structure on the electromagnetic field and on the aerial image. It is very
Compensation for imaging errors in EUV lithography
In this paper we will examine some of the fundamental imaging effects that must be considered with the intended implementation of Extreme Ultraviolet Lithography (EUVL). The paper will show how


Reflective mask technologies and imaging results in soft x‐ray projection lithography
In this work we investigate and compare a variety of technologies for patterning high resolution Mo/Si multilayer reflective x‐ray masks for use at wavelengths near 13 nm. The patterning methods
Rigorous simulation of mask corner effects in extreme ultraviolet lithography
A windowing and multilayer acceleration methodology for rigorous electromagnetic analysis of extreme ultraviolet masks in three dimension is introduced and used to explore strong feature asymmetries
Modeling oblique incidence effects in photomasks
As mask features scale to smaller dimensions, the so-called 'vertical effects' which, to present, have mostly been neglected, become important. The usual assumption of constant scattering
Performance of repaired defects and attPSM in EUV multilayer masks
The imaging performance of non-planar topographies in EUV masks for both partially repaired defects and non-planar attenuating phase-shifting masks made with repair treatments are evaluated using
EUV phase-shifting masks and aberration monitors
Rigorous electromagnetic simulation with TEMPEST is used to examine the use of phase-shifting masks in EUV lithography. The effects of oblique incident illumination and mask patterning by ion-mixing
Quantifying EUV imaging tolerances for the 70-, 50-, 35-nm modes through rigorous aerial image simulations
According to the International Technology Roadmap (ITRS) EUV exposure tools are expected to support both logic and memory manufacturing for the 70 nm node and beyond. In order to meet the CD control
EUVL masks: requirements and potential solutions
  • S. Hector
  • Materials Science
    SPIE Advanced Lithography
  • 2002
Significant progress has been made in developing mask fabrication processes for extreme ultraviolet lithography (EUVL). The mask blank for EUVL consists of a low thermal expansion material substrate
EUV mask absorber characterization and selection
In this paper, we will present our research work in EUVL mask absorber characterization and selection. The EUV mask patterning process development depends on the choice of EUVL mask absorber