Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging

@inproceedings{Deng2003RigorousES,
  title={Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging},
  author={Yunfei Deng and Bruno M. La Fontaine and Harry J. Levinson and Andrew R. Neureuther},
  booktitle={SPIE Advanced Lithography},
  year={2003}
}
Rigorous electromagnetic scattering simulation is used to characterize mask diffraction of various EUVL mask structures. Planar multilayer masks with three kinds of absorber stacks and new subtractive (binary, att-PSM, alt-PSM) etched multilayer masks are studied for lithography performance for line and space features in the 45 nm node. The simulation results for process window show that the combined depth of focus of the Cr/SiO2 absorber stack masks is about 320 nm maximum with sigma of 0.8… 
Simulation of fine structures and defects in EUV etched multilayer masks
Rigorous electromagnetic scattering simulation is used to characterize mask diffraction for fine structures of various types of EUVL masks. The Cr/SiO2 absorber mask, the etched multilayer mask and
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Traditional EUV masks, with absorber on top of the multi-layer (ML) mirror, generally suffer from mask 3D effects: H/V shadowing, best focus shifts through pitch and pattern shifts through focus.
Shadowing effect minimization in EUV mask by modeling
In Extreme Ultraviolet Lithography, the electromagnetic modeling of the mask allows to determine the influence of the mask structure on the electromagnetic field and on the aerial image. It is very
Compensation for imaging errors in EUV lithography
In this paper we will examine some of the fundamental imaging effects that must be considered with the intended implementation of Extreme Ultraviolet Lithography (EUVL). The paper will show how
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Significant progress has been made in developing mask fabrication processes for extreme ultraviolet lithography (EUVL). The mask blank for EUVL consists of a low thermal expansion material substrate
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