Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging

@inproceedings{Deng2003RigorousES,
  title={Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging},
  author={Y. Deng and Bruno M. La Fontaine and H. Levinson and A. Neureuther},
  booktitle={SPIE Advanced Lithography},
  year={2003}
}
Rigorous electromagnetic scattering simulation is used to characterize mask diffraction of various EUVL mask structures. Planar multilayer masks with three kinds of absorber stacks and new subtractive (binary, att-PSM, alt-PSM) etched multilayer masks are studied for lithography performance for line and space features in the 45 nm node. The simulation results for process window show that the combined depth of focus of the Cr/SiO2 absorber stack masks is about 320 nm maximum with sigma of 0.8… Expand
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