Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects

We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das model, which lead us to an improved treatment with generalized… CONTINUE READING