Reverse degradation of nickel graphene junction by hydrogen annealing

@article{Zhang2016ReverseDO,
  title={Reverse degradation of nickel graphene junction by hydrogen annealing},
  author={Zhenjun Zhang and Fan Yang and Pratik Agnihotri and Ji Ung Lee and James R. Lloyd},
  journal={AIP Advances},
  year={2016},
  volume={6},
  pages={025301}
}
Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation. 
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References

SHOWING 1-10 OF 31 REFERENCES

Rapid thermal annealing of graphene-metal contact

High quality graphene-metal contacts are desirable for high-performance graphene based electronics. Process related factors result large variation in the contact resistance. A post-processing method

Substrate Gating of Contact Resistance in Graphene Transistors

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it has been observed that for structures that possess both a top

Contact resistance in few and multilayer graphene devices

The contact resistance of metals on backgated graphene field-effect transistors is studied. The residual resistance obtained at high backgate voltage is found to be in excellent agreement with the

Transition metal contacts to graphene

Achieving low resistance contacts to graphene is a common concern for graphene device performance and hybrid graphene/metal interconnects. In this work, we have used the circular Transfer Length

Low-contact-resistance graphene devices with nickel-etched-graphene contacts.

TLDR
The metal-catalyzed etching contact treatment is compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and holds great promise to meet the contact performance required for the integration of graphene in future integrated circuits.

What does annealing do to metal-graphene contacts?

TLDR
It is found instead that carbon dissolves from graphene into the metal at chemisorbed Ni- and Co-graphene interfaces and leads to many end-contacts being formed between the metal and the dangling carbon bonds in the graphene, which contributes to much smaller contact resistance.

Ultraviolet/ozone treatment to reduce metal-graphene contact resistance

We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone treatment to modify the metal/graphene contact interface. The devices were fabricated from

Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

TLDR
This work illustrates the concept of graphene as a robust atomic-scale scaffold on the basis of which new two-dimensional crystals with designed electronic and other properties can be created by attaching other atoms and molecules.