Reverse-conducting-IGBTs — A new IGBT technology setting new benchmarks in traction converters

Abstract

In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy. 

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Cite this paper

@article{Hermann2013ReverseconductingIGBTsA, title={Reverse-conducting-IGBTs — A new IGBT technology setting new benchmarks in traction converters}, author={Robert Hermann and Eberhard Ulrich Krafft and Andreas Marz}, journal={2013 15th European Conference on Power Electronics and Applications (EPE)}, year={2013}, pages={1-8} }