Retrieval of optical constants of undoped amorphous selenium films from an analysis of their normal-incidence transmittance spectra using numeric PUMA method

  title={Retrieval of optical constants of undoped amorphous selenium films from an analysis of their normal-incidence transmittance spectra using numeric PUMA method},
  author={Mousa M. Abdul-Gader Jafar and Mahmoud H. Saleh and Mais Jamil A. Ahmad and Basim N. Bulos and Tariq M. Al-Daraghmeh},
  journal={Journal of Materials Science: Materials in Electronics},
The as-measured room-temperature normal-incidence transmittance–wavelength (Texp(λ) − λ) spectra of undoped amorphous selenium (a-Se) films, which were thermally deposited onto glass slides, exhibit well-resolved interference-fringe maxima and minima λ > λc (≈630 nm), below which they fall rather sharply to zero transmittance. In the transparency and weak absorption region, the maxima transmittance is close to the substrate transmission, implying good uniformity of the a-Se films. The geometric… 
Evaluation of spectral dispersion of optical constants of a-Se films from their normal-incidence transmittance spectra using Swanepoel algebraic envelope approach
Spectral dispersions of index of refraction $${n(\lambda )}$$n(λ) and extinction coefficient $${\kappa (\lambda )}$$κ(λ) of undoped amorphous selenium (a-Se) films of three thicknesses (d ≈ 0.5,
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Simulation and Experimental Validation of the Uniformity of Thermally Evaporated Amorphous Selenium Films for Large-Area Imaging and Radiation Detection Applications
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Structural, stoichiometric and optical constants of crystalline undoped lead iodide films prepared by the flash-evaporation method
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The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures $$ T_{\rm{s}} = 150 $$Ts=150°C and 200°C, respectively. The
Evaluation of Kinetic Parameters and Thermal Stability of Melt-Quenched Bi x Se 100−x Alloys (x ≤7.5 at%) by Non-Isothermal Thermogravimetric Analysis
Undoped amorphous selenium (α -Se) is a twofoldcoordinated glassy p-type semiconductor with high dark electrical resistivity (~10 Ω cm at 300 K) and bandgap energy Eg as large as 2 eV at 300 K
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Determination of Optical Properties of Undoped Amorphous Selenium (a-Se) Films by Dielectric Modeling of Their Normal-Incidence Transmittance Spectra
Normal-incidence specular transmittance T_exp (?) of undoped amorphous selenium ( a -Se) films of several thicknesses (0.25-1 ?m) thermally evaporated on thick microscopic glass-slide substrates
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Chalcogenide glasses are very important in the modern technology especially selenium-based. These glasses are sensitive to electromagnetic radiation useful in the infrared optics. The study investi-
Optical constants of amorphous Se
The pseudodielectric-function spectra, e(E)=e1(E)+ie2(E), of amorphous (a-) selenium (Se) in the 1.2–5.2 eV photon-energy range at room temperature were measured by spectroscopic ellipsometry. The
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A modified envelope method, which includes the consideration of the light intensity loss from the back surface of the substrate, was developed and shown to be a simple and convenient tool for
Determination of thickness and optical constants of amorphous silicon films from transmittance data
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