Retrieval of optical constants of undoped amorphous selenium films from an analysis of their normal-incidence transmittance spectra using numeric PUMA method

  title={Retrieval of optical constants of undoped amorphous selenium films from an analysis of their normal-incidence transmittance spectra using numeric PUMA method},
  author={Mousa M. Abdul-Gader Jafar and Mahmoud H. Saleh and Mais Jamil A. Ahmad and Basim N. Bulos and Tariq M. Al-Daraghmeh},
  journal={Journal of Materials Science: Materials in Electronics},
The as-measured room-temperature normal-incidence transmittance–wavelength (Texp(λ) − λ) spectra of undoped amorphous selenium (a-Se) films, which were thermally deposited onto glass slides, exhibit well-resolved interference-fringe maxima and minima λ > λc (≈630 nm), below which they fall rather sharply to zero transmittance. In the transparency and weak absorption region, the maxima transmittance is close to the substrate transmission, implying good uniformity of the a-Se films. The geometric… 
Evaluation of spectral dispersion of optical constants of a-Se films from their normal-incidence transmittance spectra using Swanepoel algebraic envelope approach
Spectral dispersions of index of refraction $${n(\lambda )}$$n(λ) and extinction coefficient $${\kappa (\lambda )}$$κ(λ) of undoped amorphous selenium (a-Se) films of three thicknesses (d ≈ 0.5,
Comparative study of the accuracy of characterization of thin films a-Si on glass substrates from their interference normal incidence transmittance spectrum by the Tauc-Lorentz-Urbach, the Cody-Lorentz-Urbach, the optimized envelopes and the optimized graphical methods
TwoRFmagnetron sputtered a-Si thinfilms one of them several times thicker than the other are characterized by fourmethods. Sincemost literature data indicate presence ofUrbach tails in the bandgap of
Simulation and Experimental Validation of the Uniformity of Thermally Evaporated Amorphous Selenium Films for Large-Area Imaging and Radiation Detection Applications
Amorphous selenium is one of the best photoconductors with a wide range of applications, from its early use in the photocopy industry to its present application in X-ray imaging. Low melting point
Structural, stoichiometric and optical constants of crystalline undoped lead iodide films prepared by the flash-evaporation method
The flash-evaporation method was used to deposit several thin films (1, 1.2, and 1.35 µm thick) of undoped lead iodide on glass slides held at $$150$$  °C and $$200$$  °C. Their X-ray diffraction
Optical-Electrical Properties and Thickness Analysis of TiO2 Thin Films Obtained by Magnetron Sputtering
The study of thin films with properties that meet specific needs and improve people’s quality of life has been the focus of many researchers. However, knowing and controlling the production
Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films
The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures $$ T_{\rm{s}} = 150 $$Ts=150°C and 200°C, respectively. The
Evaluation of Kinetic Parameters and Thermal Stability of Melt-Quenched Bi x Se 100−x Alloys (x ≤7.5 at%) by Non-Isothermal Thermogravimetric Analysis
Undoped amorphous selenium (α -Se) is a twofoldcoordinated glassy p-type semiconductor with high dark electrical resistivity (~10 Ω cm at 300 K) and bandgap energy Eg as large as 2 eV at 300 K
Charge Carrier Transport and Photogeneration at Very High Electric Fields in Amorphous Selenium
The flat-panel digital X-ray detectors (e.g. amorphous selenium, a-Se, based detectors) are replacing the film-based technology in various diagnostic medical imaging modalities such as mammography
Amorphous Selenium and Nanostructures
  • Keiji Tanaka
  • Materials Science
    Springer Handbook of Glass
  • 2019
This chapter reviews studies of amorphous, glassy, and nanostructured Se, focusing on their atomic structures, physical properties, light-induced phenomena, and recent photoconductive applications.


Determination of Optical Properties of Undoped Amorphous Selenium (a-Se) Films by Dielectric Modeling of Their Normal-Incidence Transmittance Spectra
Normal-incidence specular transmittance T_exp (?) of undoped amorphous selenium ( a -Se) films of several thicknesses (0.25-1 ?m) thermally evaporated on thick microscopic glass-slide substrates
Effect of structural defects on optical properties of amorphous selenium films
Thickness of film, energy of incident photons and glass transition temperature all affect the structural bonding between neighbours and are considered to be the main factors in studying the optical
Role of Bismuth and Substrate Temperature on the Optical Properties of Some Flash Evaporated Se 100-X Bi X Glassy System
Chalcogenide glasses are very important in the modern technology especially selenium-based. These glasses are sensitive to electromagnetic radiation useful in the infrared optics. The study investi-
Optical constants of amorphous Se
The pseudodielectric-function spectra, e(E)=e1(E)+ie2(E), of amorphous (a-) selenium (Se) in the 1.2–5.2 eV photon-energy range at room temperature were measured by spectroscopic ellipsometry. The
Modified Envelope Method for Obtaining Optical Properties of Weakly Absorbing Thin Films and Its Application to Thin Films of Pb(Zr,Ti)O3 Solid Solutions
A modified envelope method, which includes the consideration of the light intensity loss from the back surface of the substrate, was developed and shown to be a simple and convenient tool for
Determination of thickness and optical constants of amorphous silicon films from transmittance data
This work presents the application of a recently developed numerical method to determine the thickness and the optical constants of thin films using experimental transmittance data only. This method