Retention time of novel charge trapping memories using Al/sub 2/O/sub 3/ dielectrics

@article{Specht2003RetentionTO,
  title={Retention time of novel charge trapping memories using Al/sub 2/O/sub 3/ dielectrics},
  author={Marion Specht and Hans Reisinger and M. Stadele and Franz Hofmann and Adelina Gschwandtner and Elma Landgraf and R. J. Luyken and Thomas Schulz and Joseph Hartwich and L. Dreeskornfeld and Willam Rosner and J M Kretz and Lothar Risch},
  journal={ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.},
  year={2003},
  pages={155-158}
}
Replacing oxide-nitride-oxide (ONO) dielectrics in charge trapping memories such as SONOS (silicon/ONO/silicon) and NROM (nitrided read only memory) by high-k materials potentially offers improved scaling properties of the devices. In particular, a high dielectric constant of at least one of the three layers allows one to reduce the total equivalent oxide thickness (EOT) thus achieving the same programming electric field as in ONO stacks at reduced voltage. In this study, we evaluate the… CONTINUE READING