Restabilizing mechanisms after the onset of thermal instability in bipolar transistors

@article{Nenadovic2006RestabilizingMA,
  title={Restabilizing mechanisms after the onset of thermal instability in bipolar transistors},
  author={N. Nenadovic and Vincenzo d'Alessandro and Luigi La Spina and N. F. Rinaldi and L. K. Nanver},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={643-653}
}
The electrothermal behavior of single- and two-finger bipolar transistors at medium- and high-current operations is studied through theoretical modeling, experimental measurements, and computer simulations. Bias conditions that border thermally stable and unstable operation regimes are described by novel analytical formulations, which for the first time include simultaneously all relevant parameters that weaken the electrothermal feedback at high currents such as ballasting resistors, current… CONTINUE READING
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