Resonant tunneling permeable base transistors with high transconductance

@article{Lind2004ResonantTP,
  title={Resonant tunneling permeable base transistors with high transconductance},
  author={Erik Lind and Peter Lindstrom and L. E. Wernersson},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={678-680}
}
A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained. 
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