Resonant in-situ photoluminescence of Si-QDs buried in SiOx/SiNx distributed Bragg reflector


A 20-pair SiOx/SiNx:Si-QDs distributed Bragg reflector with in-situ Si-QDs contributed photoluminescence at 667nm is demonstrated to shrink the Si-QDs emission linewidth from 140 to 19 nm and enhance its intensity by 37.4 times. 


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