Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide.

@article{Riedel2012ResonantAA,
  title={Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide.},
  author={Daniel Riedel and F. Fuchs and Hannes Kraus and Stefan V{\"a}th and Andreas Sperlich and Vladimir Dyakonov and Alexandra A. Soltamova and Pavel G. Baranov and Vladimir A. Ilyin and Georgy V. Astakhov},
  journal={Physical review letters},
  year={2012},
  volume={109 22},
  pages={
          226402
        }
}
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nat. Mater. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to… Expand
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