Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs

@article{Parihar2017ResolutionOD,
  title={Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs},
  author={Narendra Parihar and Uma Sharma and Subhadeep Mukhopadhyay and Nilesh Goel and A. Chaudhary and Rakesh Rao and Souvik Mahapatra},
  journal={2017 IEEE International Reliability Physics Symposium (IRPS)},
  year={2017},
  pages={XT-1.1-XT-1.11}
}
Negative Bias Temperature Instability (NBTI) is due to interface trap generation (ΔN<inf>it</inf>) and trapping of holes in gate insulator traps (ΔN<inf>It</inf>). However, the isolation methods and the relative dominance of ΔN<inf>it</inf> and ΔN<inf>it</inf>, time constants of ΔN<inf>it</inf> and ΔN<inf>it</inf> for stress, recovery and associated temperature (T) activation, and whether ΔN<inf>it</inf> recovers or remains permanent after stress, are widely debated. The resolution of such… CONTINUE READING

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