Resolution, overlay, and field size for lithography systems

@article{Broers1981ResolutionOA,
  title={Resolution, overlay, and field size for lithography systems},
  author={Alec N. Broers},
  journal={IEEE Transactions on Electron Devices},
  year={1981},
  volume={28},
  pages={1268-1278}
}
  • A. Broers
  • Published 1 November 1981
  • Physics
  • IEEE Transactions on Electron Devices
Resolution, overlay, and field size limits for UV, X-ray, electron beam, and ion beam lithography are described. The following conclusions emerge in the discussion. 1) At 1-µm linewidth, contrast for optical projection can be higher than that for electron beam. 2) Optical cameras using mirror optics and deep UV radiation can potentially produce linewidths approaching 0.5 µm. 3) For the purpose of comparing the resolution of electron beam and optical exposure, it is useful to define the minimum… 
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References

SHOWING 1-2 OF 2 REFERENCES
Electrochemical Society, Inc
  • J. Vac. Sci. Technol.,
  • 1979
X-ray lithography in H
  • J. Queisser X-ray optics,” Springerverlag, Berlin,
  • 1977