Resistive switching induced by electronic avalanche breakdown in GaTa 4 Se 8 − x Te x narrow gap Mott Insulators

  title={Resistive switching induced by electronic avalanche breakdown in GaTa 4 Se 8 − x Te x narrow gap Mott Insulators},
  author={Vincent Guiot and Laurent Cario and Etienne Janod and Beno{\^i}t Corraze and Vinh Ta Phuoc and Marcelo Rozenberg and P. Stoliar and Tristan Cren and Dimitri Roditchev},
V. Guiot, L. Cario, ∗ E. Janod, B. Corraze, V. Ta Phuoc, M. Rozenberg, P. Stoliar, T. Cren, and D. Roditchev Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France GREMAN, CNRS UMR 7347 Université F.Rabelais. UFR Sciences Parc de Grandmont. 37200 ToursFrance Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France Institut des Nanosciences de Paris, Université Pierre et Marie… CONTINUE READING


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