Resistive switching induced by electronic avalanche breakdown in GaTa4Se8−xTex narrow gap Mott Insulators

Abstract

V. Guiot, L. Cario, ∗ E. Janod, B. Corraze, V. Ta Phuoc, M. Rozenberg, P. Stoliar, T. Cren, and D. Roditchev Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France GREMAN, CNRS UMR 7347 Université F.Rabelais. UFR Sciences Parc de Grandmont. 37200 ToursFrance Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588, 4 place Jussieu, F-75005 Paris, France (Dated: April 17, 2013)

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Cite this paper

@inproceedings{Guiot2013ResistiveSI, title={Resistive switching induced by electronic avalanche breakdown in GaTa4Se8−xTex narrow gap Mott Insulators}, author={Vincent Guiot and Laurent Cario and Etienne Janod and B. Corraze and V . Ta Phuoc and M. J. Rozenberg and P. Stoliar and Tristan Cren and Dimitri Roditchev}, year={2013} }