Resistive switching in single epitaxial ZnO nanoislands.

@article{Qi2012ResistiveSI,
  title={Resistive switching in single epitaxial ZnO nanoislands.},
  author={Jing Qi and Mario J. Olmedo and Jingjian Ren and Ning Zhou Zhan and Jianze Zhao and Jian-guo Zheng and Jianlin Liu},
  journal={ACS nano},
  year={2012},
  volume={6 2},
  pages={
          1051-8
        }
}
Resistive memory is one of the most promising candidates for next-generation nonvolatile memory technology due to its variety of advantages, such as simple structure and low-power consumption. Bipolar resistive switching behavior was observed in epitaxial ZnO nanoislands with base diameters and heights ranging around 30 and 40 nm, respectively. All four different states (initial, electroformed, ON, and OFF) of the nanoscale resistive memories were measured by conductive atomic force microscopy… CONTINUE READING
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