Resistive switching in Al / Tb / SiO 2 nano-multilayers

@inproceedings{Fernndez2017ResistiveSI,
  title={Resistive switching in Al / Tb / SiO 2 nano-multilayers},
  author={Blas Garrido Fern{\'a}ndez and Oriol Bl{\'a}zquez G{\'o}mez},
  year={2017}
}
  • Blas Garrido Fernández, Oriol Blázquez Gómez
  • Published 2017
1 Abstract—Resistive switching mechanism in memristors offers wide novel properties for nanoelectronics devices. In this work, we report an Al/Tb/SiO2 nano-multilayer memristor. Our devices were fabricated in terms of electron beam evaporation with thicknesses in the order of nanometres. Our devices exhibit memristive behaviour with a high change in… CONTINUE READING