Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

@article{Dou2012ResistiveSB,
  title={Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer},
  author={Chunmeng Dou and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Takeo Hattori and Hiroshi Iwai},
  journal={Microelectronics Reliability},
  year={2012},
  volume={52},
  pages={688-691}
}