Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

@article{Wu2011ResistiveSA,
  title={Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application},
  author={Yi Wu and Yang Chai and Hong-Yu Chen and Shimeng Yu and H.-S. Philip Wong},
  journal={2011 Symposium on VLSI Technology - Digest of Technical Papers},
  year={2011},
  pages={26-27}
}
We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5µA programming current. Extreme scaling of the device down to 6nm×6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale… CONTINUE READING

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