Resistive Switchings in Transition Metal Oxides

@inproceedings{Inoue2012ResistiveSI,
  title={Resistive Switchings in Transition Metal Oxides},
  author={Isao H. Inoue and Akihito Sawa},
  year={2012}
}
Promising candidates for the next-generation memory devices have emerged one after another for the last decade. Ferroelectric random access memories (FeRAM), magnetoresistive random access memories (MRAM), phase change memories (PCM) are indeed at the dawn of the international development races. Along with those three fascinating memories, we focus here on probably the most seminal candidate of the future device — resistive random access memory (RRAM® or ReRAM). ReRAM consists of a simple metal… CONTINUE READING
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