Resistance-voltage dependence of nanojunctions during electromigration in ultrahigh vacuum
@article{Stoffler2014ResistancevoltageDO, title={Resistance-voltage dependence of nanojunctions during electromigration in ultrahigh vacuum}, author={Dieter Stoffler and Michael Marz and Birgit Kiessig and T. Tomanic and Roland Schafer and Hilbert v. Lohneysen and Regina Hoffmann-Vogel}, journal={Physical Review B}, year={2014}, volume={90}, pages={115406} }
The electrical resistance $R$ of metallic nanocontacts subjected to controlled cyclic electromigration in ultrahigh vacuum has been investigated in situ as a function of applied voltage $V$. For sufficiently small contacts, i.e., large resistance, a decrease of $R(V)$ while increasing $V$ is observed. This effect is tentatively attributed to the presence of contacts separated by thin vacuum barriers in parallel to ohmic nanocontacts. Simple model calculations indicate that both thermal…
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References
Nano Lett . 5 , 1685 ( 2005 ) . 11 B . Barwiński , Thin Solid Films
- 2012