Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

@article{Lee2005ResistanceSO,
  title={Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications},
  author={Dongsoo Lee and Hyejung Choi and Hyunjun Sim and Dooho Choi and Hyunsang Hwang and Myoung-Jae Lee and Sun-Ae Seo and I. K. Yoo},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={26},
  pages={719-721}
}
The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO/sub x//p/sup +/-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrO/sub x/ thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three… CONTINUE READING
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