Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation.

@article{Khan2019ResistanceDI,
  title={Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation.},
  author={Raihan Sayeed Khan and Faruk Dirisaglik and Ali Gokirmak and Helena Silva},
  journal={arXiv: Applied Physics},
  year={2019}
}
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to 0.11 range in dark. While these drift coefficients measured in dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficients (0.05 under illumination versus… 

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