Experimental study on the uhraprecision lapping technology of the copper substrates for alloy films[J
- Zhu Congrong, Xu Qin, Yuan Julong
- Key Engineering Materials,
In the chemical mechanical polishing (CMP), polishing pad, components of polishing solution and polishing pressure have very important influence on the material removal rate (MRR) and the quality of polishing. In this article, we will do some research on above factors respectively, in order to test the influences of various factors on MRR of silicon wafer. On the other hand, we searched for the methods of improving morphology by polishing silicon wafer with prepared polishing solution and detecting its surface morphology. Through the experiments, it was found that the abrasive plays the dominant role in the material removal and the maximal proportion ups to 70.6%, and we also get a fact that the material removal rate add with polishing pressure increase. Detecting the wafer surface morphology after polishing, it was found that the surface roughness reached the nanometer level (&#60;3.81nm).