Research on material removal rate of each element of chemical mechanical polishing

Abstract

In the chemical mechanical polishing (CMP), polishing pad, components of polishing solution and polishing pressure have very important influence on the material removal rate (MRR) and the quality of polishing. In this article, we will do some research on above factors respectively, in order to test the influences of various factors on MRR of silicon wafer. On the other hand, we searched for the methods of improving morphology by polishing silicon wafer with prepared polishing solution and detecting its surface morphology. Through the experiments, it was found that the abrasive plays the dominant role in the material removal and the maximal proportion ups to 70.6%, and we also get a fact that the material removal rate add with polishing pressure increase. Detecting the wafer surface morphology after polishing, it was found that the surface roughness reached the nanometer level (<3.81nm).

Cite this paper

@article{Guo2011ResearchOM, title={Research on material removal rate of each element of chemical mechanical polishing}, author={Zhixue Guo and Qingzhong Li and Hui Zhang and Jing Zhai}, journal={2011 Second International Conference on Mechanic Automation and Control Engineering}, year={2011}, pages={608-611} }