Research of Single-Event Burnout in Floating Field Ring Termination of Power MOSFETs

Abstract

This paper presents the 2-D numerical simulation results of the single-event burnout (SEB) in the floating field ring (FFR) termination of a power MOSFET for the first time. We investigate the SEB triggering mechanism and SEB performance based on a 140-V typical FFR termination, and find that the structure is sensitive to SEB because of a sharp temperature… (More)

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