Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation.

@article{Sun2012RemovalOS,
  title={Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation.},
  author={M. H. Sun and Hannah J. Joyce and Qian Gao and Hark Hoe Tan and Chennupati Jagadish and C. Z. Ning},
  journal={Nano letters},
  year={2012},
  volume={12 7},
  pages={3378-84}
}
Surface states in semiconductor nanowires (NWs) are detrimental to the NW optical and electronic properties and to their light emission-based applications, due to the large surface-to-volume ratio of NWs and the congregation of defects states near surfaces. In this paper, we demonstrated an effective approach to eliminate surface states in InAs NWs of zinc… CONTINUE READING