Removal of C/sub 2/F/sub 6/ from a semiconductor process flue gas by a ferroelectric packed-bed barrier discharge reactor with an adsorber

@inproceedings{Urashima2001RemovalOC,
  title={Removal of C/sub 2/F/sub 6/ from a semiconductor process flue gas by a ferroelectric packed-bed barrier discharge reactor with an adsorber},
  author={Kazuaki Urashima and Konstantin Georgiev Kostov and Jen-Shih Chang and Y. Okayasa and T. Iwaizumi and Kazushi Yoshimura and Takashi Kato},
  year={2001}
}
The abatement of greenhouse gases from semiconductor processes is becoming important. Methane and/or nitrous oxide are continuously exhausted from the processes, and high concentrations of per-fluorocarbons (PFCs), such as NF/sub 3/, C/sub 2/F/sub 6/, SF/sub 6/, and CF/sub 4/, are exhausted during wafer etching and clean up of PECVD (plasma enhanced chemical vapor deposition) chambers. The removal of C/sub 2/F/sub 6/ from a simulated semiconductor-process flue gas was studied using a hybrid… CONTINUE READING

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